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STB200N6F3

STB200N6F3

For Reference Only

Part Number STB200N6F3
PNEDA Part # STB200N6F3
Description MOSFET N-CH 60V 120A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,376
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB200N6F3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB200N6F3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB200N6F3, STB200N6F3 Datasheet (Total Pages: 16, Size: 852.51 KB)
PDFSTI200N6F3 Datasheet Cover
STI200N6F3 Datasheet Page 2 STI200N6F3 Datasheet Page 3 STI200N6F3 Datasheet Page 4 STI200N6F3 Datasheet Page 5 STI200N6F3 Datasheet Page 6 STI200N6F3 Datasheet Page 7 STI200N6F3 Datasheet Page 8 STI200N6F3 Datasheet Page 9 STI200N6F3 Datasheet Page 10 STI200N6F3 Datasheet Page 11

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STB200N6F3 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 25V
FET Feature-
Power Dissipation (Max)330W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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