Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STB20NM50FDT4

STB20NM50FDT4

For Reference Only

Part Number STB20NM50FDT4
PNEDA Part # STB20NM50FDT4
Description MOSFET N-CH 500V 20A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB20NM50FDT4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB20NM50FDT4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB20NM50FDT4, STB20NM50FDT4 Datasheet (Total Pages: 16, Size: 396.5 KB)
PDFSTP20NM50FD Datasheet Cover
STP20NM50FD Datasheet Page 2 STP20NM50FD Datasheet Page 3 STP20NM50FD Datasheet Page 4 STP20NM50FD Datasheet Page 5 STP20NM50FD Datasheet Page 6 STP20NM50FD Datasheet Page 7 STP20NM50FD Datasheet Page 8 STP20NM50FD Datasheet Page 9 STP20NM50FD Datasheet Page 10 STP20NM50FD Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STB20NM50FDT4 Datasheet
  • where to find STB20NM50FDT4
  • STMicroelectronics

  • STMicroelectronics STB20NM50FDT4
  • STB20NM50FDT4 PDF Datasheet
  • STB20NM50FDT4 Stock

  • STB20NM50FDT4 Pinout
  • Datasheet STB20NM50FDT4
  • STB20NM50FDT4 Supplier

  • STMicroelectronics Distributor
  • STB20NM50FDT4 Price
  • STB20NM50FDT4 Distributor

STB20NM50FDT4 Specifications

ManufacturerSTMicroelectronics
SeriesFDmesh™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1380pF @ 25V
FET Feature-
Power Dissipation (Max)192W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

AUIRFR2905ZTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14.5mOhm @ 36A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1380pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IXFH88N30P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

88A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 44A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6300pF @ 25V

FET Feature

-

Power Dissipation (Max)

600W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id

3.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220ABFP

Package / Case

TO-220-3 Full Pack, Isolated Tab

NTMFS4827NET1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.8A (Ta), 58.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

6.95mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 12V

FET Feature

-

Power Dissipation (Max)

870mW (Ta), 38.5W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

FQPF9N50CF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FRFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

850mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1030pF @ 25V

FET Feature

-

Power Dissipation (Max)

44W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

Recently Sold

TPSE226K035R0200

TPSE226K035R0200

CAP TANT 22UF 10% 35V 2917

MMSZ4696T1G

MMSZ4696T1G

ON Semiconductor

DIODE ZENER 9.1V 500MW SOD123

FC-135 32.7680KA-A5

FC-135 32.7680KA-A5

EPSON

CRYSTAL 32.7680 KHZ 12.5PF SMD

SMF5.0A

SMF5.0A

Littelfuse

TVS DIODE 5V 9.2V SOD123F

IRLML2803TRPBF

IRLML2803TRPBF

Infineon Technologies

MOSFET N-CH 30V 1.2A SOT-23

MAX6315US31D3+T

MAX6315US31D3+T

Maxim Integrated

IC RESET CIRCUIT 3.08V SOT143-4

TDA08H0SB1

TDA08H0SB1

C&K

SWITCH SLIDE DIP SPST 25MA 24V

RT9069-25GB

RT9069-25GB

Richtek USA Inc.

IC REG LINEAR 2.5V 200MA SOT23-5

ADN4662BRZ

ADN4662BRZ

Analog Devices

IC RECEIVER 0/1 8SOIC

TZR1R080A001R00

TZR1R080A001R00

Murata

CAP TRIMMER 3-8PF 25V SMD

L78L05ABUTR

L78L05ABUTR

STMicroelectronics

IC REG LINEAR 5V 100MA SOT89-3

74LCX16373MTDX

74LCX16373MTDX

ON Semiconductor

IC LATCH TRANSP 16BIT LV 48TSSOP