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STB25NM50N-1

STB25NM50N-1

For Reference Only

Part Number STB25NM50N-1
PNEDA Part # STB25NM50N-1
Description MOSFET N-CH 500V 22A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,124
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB25NM50N-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB25NM50N-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB25NM50N-1, STB25NM50N-1 Datasheet (Total Pages: 18, Size: 630.79 KB)
PDFSTB25NM50N Datasheet Cover
STB25NM50N Datasheet Page 2 STB25NM50N Datasheet Page 3 STB25NM50N Datasheet Page 4 STB25NM50N Datasheet Page 5 STB25NM50N Datasheet Page 6 STB25NM50N Datasheet Page 7 STB25NM50N Datasheet Page 8 STB25NM50N Datasheet Page 9 STB25NM50N Datasheet Page 10 STB25NM50N Datasheet Page 11

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STB25NM50N-1 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs140mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs84nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2565pF @ 25V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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