Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STB28N60DM2

STB28N60DM2

For Reference Only

Part Number STB28N60DM2
PNEDA Part # STB28N60DM2
Description MOSFET N-CH 600V 21A
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB28N60DM2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB28N60DM2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB28N60DM2, STB28N60DM2 Datasheet (Total Pages: 20, Size: 914.29 KB)
PDFSTB28N60DM2 Datasheet Cover
STB28N60DM2 Datasheet Page 2 STB28N60DM2 Datasheet Page 3 STB28N60DM2 Datasheet Page 4 STB28N60DM2 Datasheet Page 5 STB28N60DM2 Datasheet Page 6 STB28N60DM2 Datasheet Page 7 STB28N60DM2 Datasheet Page 8 STB28N60DM2 Datasheet Page 9 STB28N60DM2 Datasheet Page 10 STB28N60DM2 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STB28N60DM2 Datasheet
  • where to find STB28N60DM2
  • STMicroelectronics

  • STMicroelectronics STB28N60DM2
  • STB28N60DM2 PDF Datasheet
  • STB28N60DM2 Stock

  • STB28N60DM2 Pinout
  • Datasheet STB28N60DM2
  • STB28N60DM2 Supplier

  • STMicroelectronics Distributor
  • STB28N60DM2 Price
  • STB28N60DM2 Distributor

STB28N60DM2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ DM2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 100V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IXFT10N100

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

155nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

SCT3080ALHRC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

104mOhm @ 10A, 18V

Vgs(th) (Max) @ Id

5.6V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 18V

Vgs (Max)

+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds

571pF @ 500V

FET Feature

-

Power Dissipation (Max)

134W

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247N

Package / Case

TO-247-3

AUIRLL2705TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

5.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

40mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223

Package / Case

TO-261-4, TO-261AA

IPZA60R120P7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

120mOhm @ 8.2A, 10V

Vgs(th) (Max) @ Id

4V @ 410µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1544pF @ 400V

FET Feature

-

Power Dissipation (Max)

95W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-4

Package / Case

TO-247-4

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

23.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

30.3nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 20V

FET Feature

-

Power Dissipation (Max)

6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

AXH016A0X3-SRZ

AXH016A0X3-SRZ

ABB Embedded Power

DC DC CONVERTER 0.8-3.6V 58W

CRCW020110K0JNED

CRCW020110K0JNED

Vishay Dale

RES SMD 10K OHM 5% 1/20W 0201

CDSOT23-T24CAN

CDSOT23-T24CAN

Bourns

TVS DIODE 24V 40V SOT23

MPQ8633BGLE-Z

MPQ8633BGLE-Z

Monolithic Power Systems Inc.

IC REG BUCK ADJUSTABLE 20A 21QFN

ATMEGA162-16PU

ATMEGA162-16PU

Microchip Technology

IC MCU 8BIT 16KB FLASH 40DIP

MAX97220AETE+

MAX97220AETE+

Maxim Integrated

IC AMP AUD.13W STER AB 16TQFN

MIC2775-22YM5-TR

MIC2775-22YM5-TR

Microchip Technology

IC SUPERVISOR MICROPOWER SOT23-5

4608X-102-103LF

4608X-102-103LF

Bourns

RES ARRAY 4 RES 10K OHM 8SIP

HX1198FNL

HX1198FNL

Pulse Electronics Network

PULSE XFMR 1CT:1CT TX 1CT:1CT RX

SP0506BAATG

SP0506BAATG

Littelfuse

TVS DIODE 5.5V 8.5V 8MSOP

0451015.MRL

0451015.MRL

Littelfuse

FUSE BRD MNT 15A 65VAC/VDC 2SMD

MIC29302BU

MIC29302BU

Microchip Technology

IC REG LINEAR POS ADJ 3A TO263-5