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STB35N60DM2

STB35N60DM2

For Reference Only

Part Number STB35N60DM2
PNEDA Part # STB35N60DM2
Description MOSFET N-CH 600V 28A
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,390
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB35N60DM2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB35N60DM2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB35N60DM2, STB35N60DM2 Datasheet (Total Pages: 15, Size: 761.34 KB)
PDFSTB35N60DM2 Datasheet Cover
STB35N60DM2 Datasheet Page 2 STB35N60DM2 Datasheet Page 3 STB35N60DM2 Datasheet Page 4 STB35N60DM2 Datasheet Page 5 STB35N60DM2 Datasheet Page 6 STB35N60DM2 Datasheet Page 7 STB35N60DM2 Datasheet Page 8 STB35N60DM2 Datasheet Page 9 STB35N60DM2 Datasheet Page 10 STB35N60DM2 Datasheet Page 11

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STB35N60DM2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ DM2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 100V
FET Feature-
Power Dissipation (Max)210W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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