Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STB37N60DM2AG

STB37N60DM2AG

For Reference Only

Part Number STB37N60DM2AG
PNEDA Part # STB37N60DM2AG
Description MOSFET N-CH 600V 28A
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,446
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB37N60DM2AG Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB37N60DM2AG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB37N60DM2AG, STB37N60DM2AG Datasheet (Total Pages: 15, Size: 910.05 KB)
PDFSTB37N60DM2AG Datasheet Cover
STB37N60DM2AG Datasheet Page 2 STB37N60DM2AG Datasheet Page 3 STB37N60DM2AG Datasheet Page 4 STB37N60DM2AG Datasheet Page 5 STB37N60DM2AG Datasheet Page 6 STB37N60DM2AG Datasheet Page 7 STB37N60DM2AG Datasheet Page 8 STB37N60DM2AG Datasheet Page 9 STB37N60DM2AG Datasheet Page 10 STB37N60DM2AG Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STB37N60DM2AG Datasheet
  • where to find STB37N60DM2AG
  • STMicroelectronics

  • STMicroelectronics STB37N60DM2AG
  • STB37N60DM2AG PDF Datasheet
  • STB37N60DM2AG Stock

  • STB37N60DM2AG Pinout
  • Datasheet STB37N60DM2AG
  • STB37N60DM2AG Supplier

  • STMicroelectronics Distributor
  • STB37N60DM2AG Price
  • STB37N60DM2AG Distributor

STB37N60DM2AG Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, MDmesh™ DM2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 100V
FET Feature-
Power Dissipation (Max)210W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IPS135N03LGAKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 15V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Stub Leads, IPak

AO4701

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

49mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

952pF @ 15V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRF7470TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

Rds On (Max) @ Id, Vgs

13mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

3430pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

NTMFS6B05NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 104A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.3W (Ta), 138W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

IRF1607

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

142A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 85A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

320nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7750pF @ 25V

FET Feature

-

Power Dissipation (Max)

380W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

MPX5010DP

MPX5010DP

NXP

SENSOR DIFF PRESS 1.45 PSI MAX

L272D

L272D

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 16SO

TX1475NL

TX1475NL

Pulse Electronics Network

XFRMR OCTAL 1:2/1:1 1.2MH SMD

XC18V04PCG44C

XC18V04PCG44C

Xilinx

IC PROM REPROGR 4MB 44-PLCC

LM211DT

LM211DT

STMicroelectronics

IC VOLTAGE COMPARATOR 8-SOIC

MF-NSMF075-2

MF-NSMF075-2

Bourns

PTC RESET FUSE 6V 750MA 1206

SP3232EET-L

SP3232EET-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

SMAZ18-13-F

SMAZ18-13-F

Diodes Incorporated

DIODE ZENER 18V 1W SMA

LAN8710AI-EZK-TR

LAN8710AI-EZK-TR

Microchip Technology

IC TRANSCEIVER FULL 4/4 32QFN

IHLP2525CZER2R2M01

IHLP2525CZER2R2M01

Vishay Dale

FIXED IND 2.2UH 8A 20 MOHM SMD

CNY17F-2

CNY17F-2

Everlight Electronics Co Ltd

OPTOISOLTR 5KV TRANSISTOR 6-DIP

FDS4935BZ

FDS4935BZ

ON Semiconductor

MOSFET 2P-CH 30V 6.9A 8-SOIC