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STB50NE10T4

STB50NE10T4

For Reference Only

Part Number STB50NE10T4
PNEDA Part # STB50NE10T4
Description MOSFET N-CH 100V 50A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,894
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB50NE10T4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB50NE10T4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB50NE10T4, STB50NE10T4 Datasheet (Total Pages: 13, Size: 438.39 KB)
PDFSTB50NE10T4 Datasheet Cover
STB50NE10T4 Datasheet Page 2 STB50NE10T4 Datasheet Page 3 STB50NE10T4 Datasheet Page 4 STB50NE10T4 Datasheet Page 5 STB50NE10T4 Datasheet Page 6 STB50NE10T4 Datasheet Page 7 STB50NE10T4 Datasheet Page 8 STB50NE10T4 Datasheet Page 9 STB50NE10T4 Datasheet Page 10 STB50NE10T4 Datasheet Page 11

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STB50NE10T4 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs166nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-65°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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