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STB60NE06L-16T4

STB60NE06L-16T4

For Reference Only

Part Number STB60NE06L-16T4
PNEDA Part # STB60NE06L-16T4
Description MOSFET N-CH 60V 60A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,222
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB60NE06L-16T4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB60NE06L-16T4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB60NE06L-16T4, STB60NE06L-16T4 Datasheet (Total Pages: 13, Size: 446.35 KB)
PDFSTB60NE06L-16T4 Datasheet Cover
STB60NE06L-16T4 Datasheet Page 2 STB60NE06L-16T4 Datasheet Page 3 STB60NE06L-16T4 Datasheet Page 4 STB60NE06L-16T4 Datasheet Page 5 STB60NE06L-16T4 Datasheet Page 6 STB60NE06L-16T4 Datasheet Page 7 STB60NE06L-16T4 Datasheet Page 8 STB60NE06L-16T4 Datasheet Page 9 STB60NE06L-16T4 Datasheet Page 10 STB60NE06L-16T4 Datasheet Page 11

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STB60NE06L-16T4 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 4.5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds4150pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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