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STB6N80K5

STB6N80K5

For Reference Only

Part Number STB6N80K5
PNEDA Part # STB6N80K5
Description MOSFET N-CH 800V 4.5A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,544
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB6N80K5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB6N80K5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB6N80K5, STB6N80K5 Datasheet (Total Pages: 26, Size: 1,285.47 KB)
PDFSTI6N80K5 Datasheet Cover
STI6N80K5 Datasheet Page 2 STI6N80K5 Datasheet Page 3 STI6N80K5 Datasheet Page 4 STI6N80K5 Datasheet Page 5 STI6N80K5 Datasheet Page 6 STI6N80K5 Datasheet Page 7 STI6N80K5 Datasheet Page 8 STI6N80K5 Datasheet Page 9 STI6N80K5 Datasheet Page 10 STI6N80K5 Datasheet Page 11

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STB6N80K5 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH5™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 10V
Vgs (Max)30V
Input Capacitance (Ciss) (Max) @ Vds255pF @ 100V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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