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STB80N4F6AG

STB80N4F6AG

For Reference Only

Part Number STB80N4F6AG
PNEDA Part # STB80N4F6AG
Description MOSFET N-CH 40V 80A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 18,468
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB80N4F6AG Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB80N4F6AG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB80N4F6AG, STB80N4F6AG Datasheet (Total Pages: 15, Size: 849.86 KB)
PDFSTB80N4F6AG Datasheet Cover
STB80N4F6AG Datasheet Page 2 STB80N4F6AG Datasheet Page 3 STB80N4F6AG Datasheet Page 4 STB80N4F6AG Datasheet Page 5 STB80N4F6AG Datasheet Page 6 STB80N4F6AG Datasheet Page 7 STB80N4F6AG Datasheet Page 8 STB80N4F6AG Datasheet Page 9 STB80N4F6AG Datasheet Page 10 STB80N4F6AG Datasheet Page 11

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STB80N4F6AG Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, STripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2150pF @ 25V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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