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STB80NF03L-04-1

STB80NF03L-04-1

For Reference Only

Part Number STB80NF03L-04-1
PNEDA Part # STB80NF03L-04-1
Description MOSFET N-CH 30V 80A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,802
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB80NF03L-04-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB80NF03L-04-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB80NF03L-04-1, STB80NF03L-04-1 Datasheet (Total Pages: 11, Size: 361.64 KB)
PDFSTB80NF03L-04-1 Datasheet Cover
STB80NF03L-04-1 Datasheet Page 2 STB80NF03L-04-1 Datasheet Page 3 STB80NF03L-04-1 Datasheet Page 4 STB80NF03L-04-1 Datasheet Page 5 STB80NF03L-04-1 Datasheet Page 6 STB80NF03L-04-1 Datasheet Page 7 STB80NF03L-04-1 Datasheet Page 8 STB80NF03L-04-1 Datasheet Page 9 STB80NF03L-04-1 Datasheet Page 10 STB80NF03L-04-1 Datasheet Page 11

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STB80NF03L-04-1 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4mOhm @ 40A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5500pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-60°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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