Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STD105N10F7AG

STD105N10F7AG

For Reference Only

Part Number STD105N10F7AG
PNEDA Part # STD105N10F7AG
Description MOSFET N-CH 100V 80A DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,174
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD105N10F7AG Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD105N10F7AG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD105N10F7AG, STD105N10F7AG Datasheet (Total Pages: 14, Size: 658.32 KB)
PDFSTD105N10F7AG Datasheet Cover
STD105N10F7AG Datasheet Page 2 STD105N10F7AG Datasheet Page 3 STD105N10F7AG Datasheet Page 4 STD105N10F7AG Datasheet Page 5 STD105N10F7AG Datasheet Page 6 STD105N10F7AG Datasheet Page 7 STD105N10F7AG Datasheet Page 8 STD105N10F7AG Datasheet Page 9 STD105N10F7AG Datasheet Page 10 STD105N10F7AG Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STD105N10F7AG Datasheet
  • where to find STD105N10F7AG
  • STMicroelectronics

  • STMicroelectronics STD105N10F7AG
  • STD105N10F7AG PDF Datasheet
  • STD105N10F7AG Stock

  • STD105N10F7AG Pinout
  • Datasheet STD105N10F7AG
  • STD105N10F7AG Supplier

  • STMicroelectronics Distributor
  • STD105N10F7AG Price
  • STD105N10F7AG Distributor

STD105N10F7AG Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, STripFET™ F7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs61nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4369pF @ 50V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

250mOhm @ 1.75A, 5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12.2nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

374pF @ 25V

FET Feature

-

Power Dissipation (Max)

6.9W (Tc)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

76.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

15.2nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2260pF @ 12V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

UPA2812T1L-E2-AT

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3740pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HWSON (3.3x3.3)

Package / Case

8-PowerVDFN

PMN50UPE,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

66mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.7nC @ 10V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

24pF @ 10V

FET Feature

-

Power Dissipation (Max)

510mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SC-74, SOT-457

GP1M016A060F

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

470mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3039pF @ 25V

FET Feature

-

Power Dissipation (Max)

48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

Recently Sold

AD7923BRUZ

AD7923BRUZ

Analog Devices

IC ADC 12BIT SAR 16TSSOP

CM200C32768AZFT

CM200C32768AZFT

Citizen Finedevice

CRYSTAL 32.7680KHZ 12.5PF SMD

SD101CW-7-F

SD101CW-7-F

Diodes Incorporated

DIODE SCHOTTKY 40V 15MA SOD123

TAJD337K010RNJ

TAJD337K010RNJ

CAP TANT 330UF 10% 10V 2917

MP3V5004GP

MP3V5004GP

NXP

IC PRESSURE SENSOR 8-SOP

SCMT22F505PRBA0

SCMT22F505PRBA0

CAPACITOR 5F 20% 5.5V THRU HOLE

W25Q64DWSSIG

W25Q64DWSSIG

Winbond Electronics

IC FLASH 64M SPI 104MHZ 8SOIC

1N5819HW-7-F

1N5819HW-7-F

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOD123

MAX3387EEUG

MAX3387EEUG

Maxim Integrated

IC TRANSCEIVER FULL 3/3 24TSSOP

EP1C20F324C7

EP1C20F324C7

Intel

IC FPGA 233 I/O 324FBGA

PIC16F690-I/SS

PIC16F690-I/SS

Microchip Technology

IC MCU 8BIT 7KB FLASH 20SSOP

VN10LP

VN10LP

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3