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STD10N60M2

STD10N60M2

For Reference Only

Part Number STD10N60M2
PNEDA Part # STD10N60M2
Description MOSFET N-CH 600V DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,326
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD10N60M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD10N60M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD10N60M2, STD10N60M2 Datasheet (Total Pages: 29, Size: 1,273.73 KB)
PDFSTB10N60M2 Datasheet Cover
STB10N60M2 Datasheet Page 2 STB10N60M2 Datasheet Page 3 STB10N60M2 Datasheet Page 4 STB10N60M2 Datasheet Page 5 STB10N60M2 Datasheet Page 6 STB10N60M2 Datasheet Page 7 STB10N60M2 Datasheet Page 8 STB10N60M2 Datasheet Page 9 STB10N60M2 Datasheet Page 10 STB10N60M2 Datasheet Page 11

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STD10N60M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II Plus
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 100V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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