Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STD10NM50N

STD10NM50N

For Reference Only

Part Number STD10NM50N
PNEDA Part # STD10NM50N
Description MOSFET N-CH 500V 7A DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,384
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD10NM50N Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD10NM50N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD10NM50N, STD10NM50N Datasheet (Total Pages: 18, Size: 1,132.08 KB)
PDFSTD10NM50N Datasheet Cover
STD10NM50N Datasheet Page 2 STD10NM50N Datasheet Page 3 STD10NM50N Datasheet Page 4 STD10NM50N Datasheet Page 5 STD10NM50N Datasheet Page 6 STD10NM50N Datasheet Page 7 STD10NM50N Datasheet Page 8 STD10NM50N Datasheet Page 9 STD10NM50N Datasheet Page 10 STD10NM50N Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STD10NM50N Datasheet
  • where to find STD10NM50N
  • STMicroelectronics

  • STMicroelectronics STD10NM50N
  • STD10NM50N PDF Datasheet
  • STD10NM50N Stock

  • STD10NM50N Pinout
  • Datasheet STD10NM50N
  • STD10NM50N Supplier

  • STMicroelectronics Distributor
  • STD10NM50N Price
  • STD10NM50N Distributor

STD10NM50N Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs630mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds450pF @ 50V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

NVD5C632NLT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

29A (Ta), 155A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5700pF @ 25V

FET Feature

-

Power Dissipation (Max)

4W (Ta), 115W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STL24NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3.3A (Ta), 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

215mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 50V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 125W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (8x8) HV

Package / Case

8-PowerVDFN

NTB30N20

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

30A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

81mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2335pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXFN100N20

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

23mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

380nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9000pF @ 25V

FET Feature

-

Power Dissipation (Max)

520W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

IRLBA1304

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

185A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 110A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

7660pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

SUPER-220™ (TO-273AA)

Package / Case

TO-273AA

Recently Sold

FSA4159L6X

FSA4159L6X

ON Semiconductor

IC SWITCH SPDT 6MICROPAK

ALS70A273NT250

ALS70A273NT250

KEMET

CAP ALUM 27000UF 20% 250V SCREW

CMS15(TE12L,Q,M)

CMS15(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 3A M-FLAT

WSL0603R1000FEA18

WSL0603R1000FEA18

Vishay Dale

RES 0.1 OHM 1% 1/5W 0603

FDS6570A

FDS6570A

ON Semiconductor

MOSFET N-CH 20V 15A 8SOIC

IHLP5050FDER3R3M01

IHLP5050FDER3R3M01

Vishay Dale

FIXED IND 3.3UH 18A 6.8 MOHM SMD

FMR0H104ZF

FMR0H104ZF

KEMET

CAPACITOR 0.1F 5.5V RADIAL

MPQ7053

MPQ7053

Central Semiconductor Corp

TRANS 2NPN/2PNP 250V 0.5A

EXB-2HV510JV

EXB-2HV510JV

Panasonic Electronic Components

RES ARRAY 8 RES 51 OHM 1506

LTC4303IMS8#TRPBF

LTC4303IMS8#TRPBF

Linear Technology/Analog Devices

IC ACCELERATOR I2C HOTSWAP 8MSOP

PMEG4010EH,115

PMEG4010EH,115

Nexperia

DIODE SCHOTTKY 40V 1A SOD123F

SCMT22F505PRBA0

SCMT22F505PRBA0

CAPACITOR 5F 20% 5.5V THRU HOLE