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STD19N3LLH6AG

STD19N3LLH6AG

For Reference Only

Part Number STD19N3LLH6AG
PNEDA Part # STD19N3LLH6AG
Description MOSFET N-CH 30V 10A DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,250
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 22 - Jun 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD19N3LLH6AG Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD19N3LLH6AG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD19N3LLH6AG, STD19N3LLH6AG Datasheet (Total Pages: 15, Size: 784.86 KB)
PDFSTD19N3LLH6AG Datasheet Cover
STD19N3LLH6AG Datasheet Page 2 STD19N3LLH6AG Datasheet Page 3 STD19N3LLH6AG Datasheet Page 4 STD19N3LLH6AG Datasheet Page 5 STD19N3LLH6AG Datasheet Page 6 STD19N3LLH6AG Datasheet Page 7 STD19N3LLH6AG Datasheet Page 8 STD19N3LLH6AG Datasheet Page 9 STD19N3LLH6AG Datasheet Page 10 STD19N3LLH6AG Datasheet Page 11

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STD19N3LLH6AG Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, STripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs33mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.7nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds321pF @ 25V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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