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STD1NK80Z-1

STD1NK80Z-1

For Reference Only

Part Number STD1NK80Z-1
PNEDA Part # STD1NK80Z-1
Description MOSFET N-CH 800V 1A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 21,906
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD1NK80Z-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD1NK80Z-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD1NK80Z-1, STD1NK80Z-1 Datasheet (Total Pages: 15, Size: 601.04 KB)
PDFSTN1NK80Z Datasheet Cover
STN1NK80Z Datasheet Page 2 STN1NK80Z Datasheet Page 3 STN1NK80Z Datasheet Page 4 STN1NK80Z Datasheet Page 5 STN1NK80Z Datasheet Page 6 STN1NK80Z Datasheet Page 7 STN1NK80Z Datasheet Page 8 STN1NK80Z Datasheet Page 9 STN1NK80Z Datasheet Page 10 STN1NK80Z Datasheet Page 11

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STD1NK80Z-1 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs16Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds160pF @ 25V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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