Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STD3N65M6

STD3N65M6

For Reference Only

Part Number STD3N65M6
PNEDA Part # STD3N65M6
Description MOSFET N-CH 650V DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,462
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD3N65M6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD3N65M6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STD3N65M6 Datasheet
  • where to find STD3N65M6
  • STMicroelectronics

  • STMicroelectronics STD3N65M6
  • STD3N65M6 PDF Datasheet
  • STD3N65M6 Stock

  • STD3N65M6 Pinout
  • Datasheet STD3N65M6
  • STD3N65M6 Supplier

  • STMicroelectronics Distributor
  • STD3N65M6 Price
  • STD3N65M6 Distributor

STD3N65M6 Specifications

ManufacturerSTMicroelectronics
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

APT50MC120JCU2

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

71A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

34mOhm @ 50A, 20V

Vgs(th) (Max) @ Id

2.3V @ 1mA (Typ)

Gate Charge (Qg) (Max) @ Vgs

179nC @ 20V

Vgs (Max)

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds

2980pF @ 1000V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Package / Case

SOT-227-4, miniBLOC

TK65S04K3L(T6L1,NQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

65A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 10V

FET Feature

-

Power Dissipation (Max)

88W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK+

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDMS8460

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

25A (Ta), 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7205pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

NVMFS5C404NLAFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

370A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

0.67mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12168pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

IRFP044PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

57A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

28mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

Recently Sold

TCZT8020-PAER

TCZT8020-PAER

Vishay Semiconductor Opto Division

PAIRS, IR, SINGLE PARTS: V420P/S

MC14489BPE

MC14489BPE

NXP

IC LED DRIVER 5-CH CMOS 20-DIP

TSV992IQ2T

TSV992IQ2T

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8DFN

MIC4420YN

MIC4420YN

Microchip Technology

IC DRIVER MOSFET 6A LO SIDE 8DIP

STM8AL3LE88TCY

STM8AL3LE88TCY

STMicroelectronics

IC MCU 8BIT 64KB FLASH 48LQFP

CDRH124NP-100MC

CDRH124NP-100MC

Sumida

FIXED IND 10UH 4.5A 28 MOHM SMD

IXFK90N20

IXFK90N20

IXYS

MOSFET N-CH 200V 90A TO-264AA

SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 3.1A SOT23-3

ISL97900CRZ-T7A

ISL97900CRZ-T7A

Renesas Electronics America Inc.

IC LED DRIVER RGLTR DIM 28QFN

66F070

66F070

Sensata-Airpax

THERMOSTAT 70 DEG NO 8-DIP

744314150

744314150

Wurth Electronics

FIXED IND 1.5UH 13A 4.3 MOHM SMD

S25FL032P0XMFI001

S25FL032P0XMFI001

Cypress Semiconductor

IC FLASH 32M SPI 104MHZ 16SOIC