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STD3NK80Z-1

STD3NK80Z-1

For Reference Only

Part Number STD3NK80Z-1
PNEDA Part # STD3NK80Z-1
Description MOSFET N-CH 800V 2.5A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,258
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD3NK80Z-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD3NK80Z-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD3NK80Z-1, STD3NK80Z-1 Datasheet (Total Pages: 29, Size: 1,357.45 KB)
PDFSTD3NK80Z-1 Datasheet Cover
STD3NK80Z-1 Datasheet Page 2 STD3NK80Z-1 Datasheet Page 3 STD3NK80Z-1 Datasheet Page 4 STD3NK80Z-1 Datasheet Page 5 STD3NK80Z-1 Datasheet Page 6 STD3NK80Z-1 Datasheet Page 7 STD3NK80Z-1 Datasheet Page 8 STD3NK80Z-1 Datasheet Page 9 STD3NK80Z-1 Datasheet Page 10 STD3NK80Z-1 Datasheet Page 11

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STD3NK80Z-1 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds485pF @ 25V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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