+86-0755-83210135
sales@pneda.com
sa12@pneda.com
WeChat WeChat
3008774181
Send Message
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STD70N03L

STD70N03L

For Reference Only

Part Number STD70N03L
PNEDA Part # STD70N03L
Manufacturer STMicroelectronics
Description MOSFET N-CH 30V 70A DPAK
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 4,662
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Jul 29 - Aug 3 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

STD70N03L Resources

Brand STMicroelectronics
Mfr. Part NumberSTD70N03L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD70N03L, STD70N03L Datasheet (Total Pages: 16, Size: 353.8 KB)
PDFSTD70N03L-1 Datasheet Cover
STD70N03L-1 Datasheet Page 2 STD70N03L-1 Datasheet Page 3 STD70N03L-1 Datasheet Page 4 STD70N03L-1 Datasheet Page 5 STD70N03L-1 Datasheet Page 6 STD70N03L-1 Datasheet Page 7 STD70N03L-1 Datasheet Page 8 STD70N03L-1 Datasheet Page 9 STD70N03L-1 Datasheet Page 10 STD70N03L-1 Datasheet Page 11

STD70N03L Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs7.3mOhm @ 35A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

The Products You May Be Interested In

BSS126H6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

21mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0V, 10V

Rds On (Max) @ Id, Vgs

500Ohm @ 16mA, 10V

Vgs(th) (Max) @ Id

1.6V @ 8µA

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

28pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

FQPF5N60CYDTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5Ohm @ 2.25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 25V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F-3 (Y-Forming)

Package / Case

TO-220-3 Full Pack, Formed Leads

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

21A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

3V, 8V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 24A, 8V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.4nC @ 4.5V

Vgs (Max)

+10V, -8V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 12.5V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SON-EP (3x3)

Package / Case

8-PowerTDFN

STP11N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

644pF @ 100V

FET Feature

-

Power Dissipation (Max)

85W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IRFSL4310PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7670pF @ 50V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Certificates

Quick Inquiry

Add to Shopping Cart

Contact Us

Need Help?

Don't hesitate to contact us if you have any question about STD70N03L.

Recently Sold

LT1167ACS8#PBF

LT1167ACS8#PBF

Linear Technology/Analog Devices

IC INST AMP 1 CIRCUIT 8SO

SMF05C.TCT

SMF05C.TCT

Semtech

TVS DIODE 5V 12.5V SC70-6

DHS4E4F272KT2B

DHS4E4F272KT2B

Murata

CAP CER 2700PF 30KV N4700 DISK

LG Q971-KN-1

LG Q971-KN-1

OSRAM Opto Semiconductors Inc.

LED GREEN DIFFUSED SMD

SMBJ45A-E3/52

SMBJ45A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 45V 72.7V DO214AA

4608X-101-332LF

4608X-101-332LF

Bourns

RES ARRAY 7 RES 3.3K OHM 8SIP

T520V337M2R5ATE025

T520V337M2R5ATE025

KEMET

CAP TANT POLY 330UF 2.5V 2917

ADP2384ACPZN-R7

ADP2384ACPZN-R7

Analog Devices

IC REG BUCK ADJ 4A 24LFCSP

C8051F340-GQ

C8051F340-GQ

Silicon Labs

IC MCU 8BIT 64KB FLASH 48TQFP

744774047

744774047

Wurth Electronics

FIXED IND 4.7UH 3A 71 MOHM SMD

ATMEGA2560-16AU

ATMEGA2560-16AU

Microchip Technology

IC MCU 8BIT 256KB FLASH 100TQFP

TPSD227K006R0100

TPSD227K006R0100

AVX

CAP TANT 220UF 10% 6.3V 2917