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STD96N3LLH6

STD96N3LLH6

For Reference Only

Part Number STD96N3LLH6
PNEDA Part # STD96N3LLH6
Description MOSFET N-CH 30V 80A DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,518
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD96N3LLH6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD96N3LLH6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD96N3LLH6, STD96N3LLH6 Datasheet (Total Pages: 15, Size: 947.34 KB)
PDFSTD96N3LLH6 Datasheet Cover
STD96N3LLH6 Datasheet Page 2 STD96N3LLH6 Datasheet Page 3 STD96N3LLH6 Datasheet Page 4 STD96N3LLH6 Datasheet Page 5 STD96N3LLH6 Datasheet Page 6 STD96N3LLH6 Datasheet Page 7 STD96N3LLH6 Datasheet Page 8 STD96N3LLH6 Datasheet Page 9 STD96N3LLH6 Datasheet Page 10 STD96N3LLH6 Datasheet Page 11

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STD96N3LLH6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5.5V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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