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STD9NM50N-1

STD9NM50N-1

For Reference Only

Part Number STD9NM50N-1
PNEDA Part # STD9NM50N-1
Description MOSFET N-CH 500V 7.5A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,182
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD9NM50N-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD9NM50N-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD9NM50N-1, STD9NM50N-1 Datasheet (Total Pages: 17, Size: 460.11 KB)
PDFSTP9NM50N Datasheet Cover
STP9NM50N Datasheet Page 2 STP9NM50N Datasheet Page 3 STP9NM50N Datasheet Page 4 STP9NM50N Datasheet Page 5 STP9NM50N Datasheet Page 6 STP9NM50N Datasheet Page 7 STP9NM50N Datasheet Page 8 STP9NM50N Datasheet Page 9 STP9NM50N Datasheet Page 10 STP9NM50N Datasheet Page 11

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STD9NM50N-1 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs560mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds570pF @ 50V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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