Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STE48NM50

STE48NM50

For Reference Only

Part Number STE48NM50
PNEDA Part # STE48NM50
Description MOSFET N-CH 550V 48A ISOTOP
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,858
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STE48NM50 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTE48NM50
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STE48NM50, STE48NM50 Datasheet (Total Pages: 9, Size: 239.03 KB)
PDFSTE48NM50 Datasheet Cover
STE48NM50 Datasheet Page 2 STE48NM50 Datasheet Page 3 STE48NM50 Datasheet Page 4 STE48NM50 Datasheet Page 5 STE48NM50 Datasheet Page 6 STE48NM50 Datasheet Page 7 STE48NM50 Datasheet Page 8 STE48NM50 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STE48NM50 Datasheet
  • where to find STE48NM50
  • STMicroelectronics

  • STMicroelectronics STE48NM50
  • STE48NM50 PDF Datasheet
  • STE48NM50 Stock

  • STE48NM50 Pinout
  • Datasheet STE48NM50
  • STE48NM50 Supplier

  • STMicroelectronics Distributor
  • STE48NM50 Price
  • STE48NM50 Distributor

STE48NM50 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 24A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs117nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3700pF @ 25V
FET Feature-
Power Dissipation (Max)450W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageISOTOP®
Package / CaseISOTOP

The Products You May Be Interested In

FCP380N60E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1770pF @ 25V

FET Feature

-

Power Dissipation (Max)

106W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

185mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5150pF @ 25V

FET Feature

-

Power Dissipation (Max)

830W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.45mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9580pF @ 25V

FET Feature

-

Power Dissipation (Max)

324W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

PML260SN,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

8.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

294mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

13.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

657pF @ 30V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN3333-8

Package / Case

8-VDFN Exposed Pad

TSM3N90CI C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.1Ohm @ 1.25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

748pF @ 25V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220AB

Package / Case

TO-220-3 Full Pack, Isolated Tab

Recently Sold

1206L110THYR

1206L110THYR

Littelfuse

PTC RESET FUSE 8V 1.1A 1206

MCR03EZPJ000

MCR03EZPJ000

Rohm Semiconductor

RES SMD 0 OHM JUMPER 1/10W 0603

T491C107K016AT

T491C107K016AT

KEMET

CAP TANT 100UF 10% 16V 2312

LT1129IQ#PBF

LT1129IQ#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 700MA 5DDPAK

IHLP1616BZERR47M11

IHLP1616BZERR47M11

Vishay Dale

FIXED IND 470NH 7A 16 MOHM SMD

CMS15(TE12L,Q,M)

CMS15(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 3A M-FLAT

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

NC7SV74K8X

NC7SV74K8X

ON Semiconductor

IC FF D-TYPE SNGL 1BIT US8

FDV303N

FDV303N

ON Semiconductor

MOSFET N-CH 25V 680MA SOT-23

LSXH4L

LSXH4L

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION DPDT 10A 120V

LT3080EMS8E#PBF

LT3080EMS8E#PBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 1.1A 8MSOP

7427931

7427931

Wurth Electronics

FERRITE BEAD 91 OHM 2SMD 1LN