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STFI11N65M2

STFI11N65M2

For Reference Only

Part Number STFI11N65M2
PNEDA Part # STFI11N65M2
Description MOSFET N-CH 650V 7A I2PAKFP
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,160
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STFI11N65M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTFI11N65M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STFI11N65M2, STFI11N65M2 Datasheet (Total Pages: 15, Size: 735.39 KB)
PDFSTFI11N65M2 Datasheet Cover
STFI11N65M2 Datasheet Page 2 STFI11N65M2 Datasheet Page 3 STFI11N65M2 Datasheet Page 4 STFI11N65M2 Datasheet Page 5 STFI11N65M2 Datasheet Page 6 STFI11N65M2 Datasheet Page 7 STFI11N65M2 Datasheet Page 8 STFI11N65M2 Datasheet Page 9 STFI11N65M2 Datasheet Page 10 STFI11N65M2 Datasheet Page 11

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STFI11N65M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II Plus
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs670mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds410pF @ 100V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak

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