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STFW42N60M2-EP

STFW42N60M2-EP

For Reference Only

Part Number STFW42N60M2-EP
PNEDA Part # STFW42N60M2-EP
Description MOSFET N-CH 600V 34A
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,626
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STFW42N60M2-EP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTFW42N60M2-EP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STFW42N60M2-EP, STFW42N60M2-EP Datasheet (Total Pages: 16, Size: 633.19 KB)
PDFSTFW42N60M2-EP Datasheet Cover
STFW42N60M2-EP Datasheet Page 2 STFW42N60M2-EP Datasheet Page 3 STFW42N60M2-EP Datasheet Page 4 STFW42N60M2-EP Datasheet Page 5 STFW42N60M2-EP Datasheet Page 6 STFW42N60M2-EP Datasheet Page 7 STFW42N60M2-EP Datasheet Page 8 STFW42N60M2-EP Datasheet Page 9 STFW42N60M2-EP Datasheet Page 10 STFW42N60M2-EP Datasheet Page 11

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STFW42N60M2-EP Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs87mOhm @ 17A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2370pF @ 100V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOWATT-218FX
Package / CaseISOWATT218FX

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