STGB10H60DF
For Reference Only
| Part Number | STGB10H60DF |
| PNEDA Part # | STGB10H60DF |
| Description | IGBT 600V 20A 115W D2PAK |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 12,246 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
STGB10H60DF Resources
| Brand | STMicroelectronics |
| ECAD Module |
|
| Mfr. Part Number | STGB10H60DF |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- STGB10H60DF Datasheet
- where to find STGB10H60DF
- STMicroelectronics
- STMicroelectronics STGB10H60DF
- STGB10H60DF PDF Datasheet
- STGB10H60DF Stock
- STGB10H60DF Pinout
- Datasheet STGB10H60DF
- STGB10H60DF Supplier
- STMicroelectronics Distributor
- STGB10H60DF Price
- STGB10H60DF Distributor
STGB10H60DF Specifications
| Manufacturer | STMicroelectronics |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 20A |
| Current - Collector Pulsed (Icm) | 40A |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 10A |
| Power - Max | 115W |
| Switching Energy | 83µJ (on), 140µJ (off) |
| Input Type | Standard |
| Gate Charge | 57nC |
| Td (on/off) @ 25°C | 19.5ns/103ns |
| Test Condition | 400V, 10A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 107ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
The Products You May Be Interested In
|
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 200A Current - Collector Pulsed (Icm) 580A Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 75A Power - Max 1040W Switching Energy - Input Type Standard Gate Charge 350nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 1.5µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264 |
Manufacturer Infineon Technologies Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 41A Current - Collector Pulsed (Icm) 112A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A Power - Max 250W Switching Energy 1.29mJ Input Type Standard Gate Charge 140nC Td (on/off) @ 25°C 44ns/291ns Test Condition 400V, 30A, 11Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 100A Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A Power - Max 417W Switching Energy 1.5mJ (on), 460µJ (off) Input Type Standard Gate Charge 220nC Td (on/off) @ 25°C 100ns/237ns Test Condition 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr) 94ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
Manufacturer STMicroelectronics Series HB IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A Power - Max 283W Switching Energy 363µJ (off) Input Type Standard Gate Charge 210nC Td (on/off) @ 25°C -/142ns Test Condition 400V, 40A, 5Ohm, 15V Reverse Recovery Time (trr) 140ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 16A Current - Collector Pulsed (Icm) 40A Vce(on) (Max) @ Vge, Ic 6V @ 15V, 10A Power - Max 150W Switching Energy 2.5mJ (off) Input Type Standard Gate Charge 65nC Td (on/off) @ 25°C 15ns/250ns Test Condition 1360V, 10A, 10Ohm, 15V Reverse Recovery Time (trr) 25ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263HV |
