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STGB10NB37LZ

STGB10NB37LZ

For Reference Only

Part Number STGB10NB37LZ
PNEDA Part # STGB10NB37LZ
Description IGBT 440V 20A 125W D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGB10NB37LZ Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGB10NB37LZ
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGB10NB37LZ, STGB10NB37LZ Datasheet (Total Pages: 15, Size: 747.03 KB)
PDFSTGB10NB37LZ Datasheet Cover
STGB10NB37LZ Datasheet Page 2 STGB10NB37LZ Datasheet Page 3 STGB10NB37LZ Datasheet Page 4 STGB10NB37LZ Datasheet Page 5 STGB10NB37LZ Datasheet Page 6 STGB10NB37LZ Datasheet Page 7 STGB10NB37LZ Datasheet Page 8 STGB10NB37LZ Datasheet Page 9 STGB10NB37LZ Datasheet Page 10 STGB10NB37LZ Datasheet Page 11

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STGB10NB37LZ Specifications

ManufacturerSTMicroelectronics
SeriesPowerMESH™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)440V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic1.8V @ 4.5V, 10A
Power - Max125W
Switching Energy2.4mJ (on), 5mJ (off)
Input TypeStandard
Gate Charge28nC
Td (on/off) @ 25°C1.3µs/8µs
Test Condition328V, 10A, 1kOhm, 5V
Reverse Recovery Time (trr)-
Operating Temperature-65°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

400µJ (on), 300µJ (off)

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

480V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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IRG4BC30U-S

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

23A

Current - Collector Pulsed (Icm)

92A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Power - Max

100W

Switching Energy

160µJ (on), 200µJ (off)

Input Type

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Gate Charge

50nC

Td (on/off) @ 25°C

17ns/78ns

Test Condition

480V, 12A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

IGW25T120FKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

NPT, Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

75A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 25A

Power - Max

190W

Switching Energy

4.2mJ

Input Type

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Gate Charge

155nC

Td (on/off) @ 25°C

50ns/560ns

Test Condition

600V, 25A, 22Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

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