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STGB10NC60KDT4

STGB10NC60KDT4

For Reference Only

Part Number STGB10NC60KDT4
PNEDA Part # STGB10NC60KDT4
Description IGBT 600V 20A 65W D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 32,562
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGB10NC60KDT4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGB10NC60KDT4
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGB10NC60KDT4, STGB10NC60KDT4 Datasheet (Total Pages: 30, Size: 1,653.19 KB)
PDFSTGD10NC60KT4 Datasheet Cover
STGD10NC60KT4 Datasheet Page 2 STGD10NC60KT4 Datasheet Page 3 STGD10NC60KT4 Datasheet Page 4 STGD10NC60KT4 Datasheet Page 5 STGD10NC60KT4 Datasheet Page 6 STGD10NC60KT4 Datasheet Page 7 STGD10NC60KT4 Datasheet Page 8 STGD10NC60KT4 Datasheet Page 9 STGD10NC60KT4 Datasheet Page 10 STGD10NC60KT4 Datasheet Page 11

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STGB10NC60KDT4 Specifications

ManufacturerSTMicroelectronics
SeriesPowerMESH™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)30A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 5A
Power - Max65W
Switching Energy55µJ (on), 85µJ (off)
Input TypeStandard
Gate Charge19nC
Td (on/off) @ 25°C17ns/72ns
Test Condition390V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr)22ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 24A

Power - Max

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Switching Energy

240µJ (off)

Input Type

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Gate Charge

55nC

Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

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Power - Max

428W

Switching Energy

1.74mJ (on), 560µJ (off)

Input Type

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Gate Charge

225nC

Td (on/off) @ 25°C

40ns/490ns

Test Condition

600V, 25A, 23Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

480V, 41A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Package / Case

TO-247-3

Supplier Device Package

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IXYS

Manufacturer

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

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Power - Max

200W

Switching Energy

2.7mJ (off)

Input Type

Standard

Gate Charge

116nC

Td (on/off) @ 25°C

25ns/180ns

Test Condition

480V, 40A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Supplier Device Package

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AOK75B60D1

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

Alpha IGBT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

150A

Current - Collector Pulsed (Icm)

290A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Power - Max

500W

Switching Energy

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Input Type

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Gate Charge

118nC

Td (on/off) @ 25°C

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Test Condition

400V, 75A, 4Ohm, 15V

Reverse Recovery Time (trr)

147ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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