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STGB12NB60KDT4

STGB12NB60KDT4

For Reference Only

Part Number STGB12NB60KDT4
PNEDA Part # STGB12NB60KDT4
Description IGBT 600V 30A 125W D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,964
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGB12NB60KDT4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGB12NB60KDT4
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGB12NB60KDT4, STGB12NB60KDT4 Datasheet (Total Pages: 11, Size: 381.08 KB)
PDFSTGF12NB60KD Datasheet Cover
STGF12NB60KD Datasheet Page 2 STGF12NB60KD Datasheet Page 3 STGF12NB60KD Datasheet Page 4 STGF12NB60KD Datasheet Page 5 STGF12NB60KD Datasheet Page 6 STGF12NB60KD Datasheet Page 7 STGF12NB60KD Datasheet Page 8 STGF12NB60KD Datasheet Page 9 STGF12NB60KD Datasheet Page 10 STGF12NB60KD Datasheet Page 11

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STGB12NB60KDT4 Specifications

ManufacturerSTMicroelectronics
SeriesPowerMESH™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 12A
Power - Max125W
Switching Energy258µJ (off)
Input TypeStandard
Gate Charge54nC
Td (on/off) @ 25°C25ns/96ns
Test Condition480V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)80ns
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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IXYS

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

14A

Vce(on) (Max) @ Vge, Ic

7V @ 15V, 3A

Power - Max

75W

Switching Energy

590µJ (on), 180µJ (off)

Input Type

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Gate Charge

18.5nC

Td (on/off) @ 25°C

46ns/220ns

Test Condition

850V, 6A, 33Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 28A

Power - Max

150W

Switching Energy

2mJ (off)

Input Type

Standard

Gate Charge

68nC

Td (on/off) @ 25°C

15ns/175ns

Test Condition

480V, 28A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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IRG6I330U-168P

Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

330V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

TO-220-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

1000V

Current - Collector (Ic) (Max)

85A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 30A

Power - Max

320W

Switching Energy

2.11mJ (on), 1.18mJ (off)

Input Type

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Gate Charge

157nC

Td (on/off) @ 25°C

25ns/229ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

153ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

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Td (on/off) @ 25°C

-

Test Condition

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Reverse Recovery Time (trr)

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Mounting Type

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Package / Case

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Supplier Device Package

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