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STGB15M65DF2

STGB15M65DF2

For Reference Only

Part Number STGB15M65DF2
PNEDA Part # STGB15M65DF2
Description TRENCH GATE FIELD-STOP IGBT M SE
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 12,672
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGB15M65DF2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGB15M65DF2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGB15M65DF2, STGB15M65DF2 Datasheet (Total Pages: 19, Size: 1,106.57 KB)
PDFSTGB15M65DF2 Datasheet Cover
STGB15M65DF2 Datasheet Page 2 STGB15M65DF2 Datasheet Page 3 STGB15M65DF2 Datasheet Page 4 STGB15M65DF2 Datasheet Page 5 STGB15M65DF2 Datasheet Page 6 STGB15M65DF2 Datasheet Page 7 STGB15M65DF2 Datasheet Page 8 STGB15M65DF2 Datasheet Page 9 STGB15M65DF2 Datasheet Page 10 STGB15M65DF2 Datasheet Page 11

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STGB15M65DF2 Specifications

ManufacturerSTMicroelectronics
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 15A
Power - Max136W
Switching Energy90µJ (on), 450µJ (off)
Input TypeStandard
Gate Charge45nC
Td (on/off) @ 25°C24ns/93ns
Test Condition400V, 15A, 12Ohm, 15V
Reverse Recovery Time (trr)142ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

400V, 10A, 6Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

170nC

Td (on/off) @ 25°C

50ns/180ns

Test Condition

960V, 35A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

STGW35NC120HD

STMicroelectronics

Manufacturer

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Series

PowerMESH™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

135A

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 20A

Power - Max

235W

Switching Energy

1.66mJ (on), 4.44mJ (off)

Input Type

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Gate Charge

110nC

Td (on/off) @ 25°C

29ns/275ns

Test Condition

960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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