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STGB19NC60WT4

STGB19NC60WT4

For Reference Only

Part Number STGB19NC60WT4
PNEDA Part # STGB19NC60WT4
Description IGBT 600V 40A 130W D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 12,660
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGB19NC60WT4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGB19NC60WT4
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGB19NC60WT4, STGB19NC60WT4 Datasheet (Total Pages: 16, Size: 313.75 KB)
PDFSTGP19NC60W Datasheet Cover
STGP19NC60W Datasheet Page 2 STGP19NC60W Datasheet Page 3 STGP19NC60W Datasheet Page 4 STGP19NC60W Datasheet Page 5 STGP19NC60W Datasheet Page 6 STGP19NC60W Datasheet Page 7 STGP19NC60W Datasheet Page 8 STGP19NC60W Datasheet Page 9 STGP19NC60W Datasheet Page 10 STGP19NC60W Datasheet Page 11

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STGB19NC60WT4 Specifications

ManufacturerSTMicroelectronics
SeriesPowerMESH™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 12A
Power - Max130W
Switching Energy81µJ (on), 125µJ (off)
Input TypeStandard
Gate Charge53nC
Td (on/off) @ 25°C25ns/90ns
Test Condition390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

195A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

800µJ (on), 1.25mJ (off)

Input Type

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Gate Charge

68nC

Td (on/off) @ 25°C

20ns/140ns

Test Condition

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Operating Temperature

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Mounting Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Supplier Device Package

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IRGS4610DPBF

Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

74ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Manufacturer

IXYS

Series

GenX3™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

31ns/152ns

Test Condition

480V, 50A, 3Ohm, 15V

Reverse Recovery Time (trr)

140ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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NGTB20N120IHSWG

ON Semiconductor

Manufacturer

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 20A

Power - Max

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Switching Energy

650µJ (off)

Input Type

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Gate Charge

155nC

Td (on/off) @ 25°C

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Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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