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STGB30H60DF

STGB30H60DF

For Reference Only

Part Number STGB30H60DF
PNEDA Part # STGB30H60DF
Description IGBT 600V 60A 260W D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,600
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGB30H60DF Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGB30H60DF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGB30H60DF, STGB30H60DF Datasheet (Total Pages: 24, Size: 1,944.67 KB)
PDFSTGB30H60DF Datasheet Cover
STGB30H60DF Datasheet Page 2 STGB30H60DF Datasheet Page 3 STGB30H60DF Datasheet Page 4 STGB30H60DF Datasheet Page 5 STGB30H60DF Datasheet Page 6 STGB30H60DF Datasheet Page 7 STGB30H60DF Datasheet Page 8 STGB30H60DF Datasheet Page 9 STGB30H60DF Datasheet Page 10 STGB30H60DF Datasheet Page 11

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STGB30H60DF Specifications

ManufacturerSTMicroelectronics
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 30A
Power - Max260W
Switching Energy350µJ (on), 400µJ (off)
Input TypeStandard
Gate Charge105nC
Td (on/off) @ 25°C50ns/160ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)110ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 35A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop™

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

77A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 75A

Power - Max

178W

Switching Energy

2.65mJ (on), 1.3mJ (off)

Input Type

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Gate Charge

440nC

Td (on/off) @ 25°C

32ns/210ns

Test Condition

400V, 75A, 5Ohm, 15V

Reverse Recovery Time (trr)

107ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

321W

Switching Energy

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Input Type

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Gate Charge

234nC

Td (on/off) @ 25°C

-/233ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Power - Max

535W

Switching Energy

3.4mJ (on), 1.1mJ (off)

Input Type

Standard

Gate Charge

313nC

Td (on/off) @ 25°C

116ns/286ns

Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

68A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 40A

Power - Max

200W

Switching Energy

550µJ (off)

Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

18ns/190ns

Test Condition

480V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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