Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STGB30M65DF2

STGB30M65DF2

For Reference Only

Part Number STGB30M65DF2
PNEDA Part # STGB30M65DF2
Description IGBT 650V 30A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,448
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGB30M65DF2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGB30M65DF2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGB30M65DF2, STGB30M65DF2 Datasheet (Total Pages: 18, Size: 876.14 KB)
PDFSTGB30M65DF2 Datasheet Cover
STGB30M65DF2 Datasheet Page 2 STGB30M65DF2 Datasheet Page 3 STGB30M65DF2 Datasheet Page 4 STGB30M65DF2 Datasheet Page 5 STGB30M65DF2 Datasheet Page 6 STGB30M65DF2 Datasheet Page 7 STGB30M65DF2 Datasheet Page 8 STGB30M65DF2 Datasheet Page 9 STGB30M65DF2 Datasheet Page 10 STGB30M65DF2 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STGB30M65DF2 Datasheet
  • where to find STGB30M65DF2
  • STMicroelectronics

  • STMicroelectronics STGB30M65DF2
  • STGB30M65DF2 PDF Datasheet
  • STGB30M65DF2 Stock

  • STGB30M65DF2 Pinout
  • Datasheet STGB30M65DF2
  • STGB30M65DF2 Supplier

  • STMicroelectronics Distributor
  • STGB30M65DF2 Price
  • STGB30M65DF2 Distributor

STGB30M65DF2 Specifications

ManufacturerSTMicroelectronics
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
Power - Max258W
Switching Energy300µJ (on), 960µJ (off)
Input TypeStandard
Gate Charge80nC
Td (on/off) @ 25°C31.6ns/115ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)140ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

The Products You May Be Interested In

IKB20N65EH5ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop™ 5

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

38A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 20A

Power - Max

125W

Switching Energy

560µJ (on), 130µJ (off)

Input Type

Standard

Gate Charge

48nC

Td (on/off) @ 25°C

19ns/160ns

Test Condition

400V, 20A, 32Ohm, 15V

Reverse Recovery Time (trr)

80ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D²PAK (TO-263AB)

APT25GP120BDQ1G

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

69A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 25A

Power - Max

417W

Switching Energy

500µJ (on), 440µJ (off)

Input Type

Standard

Gate Charge

110nC

Td (on/off) @ 25°C

12ns/70ns

Test Condition

600V, 25A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

Manufacturer

IXYS

Series

-

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

24A

Current - Collector Pulsed (Icm)

48A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 12A

Power - Max

75W

Switching Energy

5.4mJ (off)

Input Type

Standard

Gate Charge

24nC

Td (on/off) @ 25°C

15ns/680ns

Test Condition

960V, 12A, 100Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

IRG7PH42UD1-EP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

85A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 30A

Power - Max

313W

Switching Energy

1.21mJ (off)

Input Type

Standard

Gate Charge

180nC

Td (on/off) @ 25°C

-/270ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

Recently Sold

PD55015-E

PD55015-E

STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

V5.5MLA0603NH

V5.5MLA0603NH

Littelfuse

VARISTOR 8.2V 30A 0603

ST16C2552IJ44TR-F

ST16C2552IJ44TR-F

MaxLinear, Inc.

IC UART FIFO 16B DUAL 44PLCC

MLX90615SSG-DAA-000-TU

MLX90615SSG-DAA-000-TU

Melexis Technologies NV

SENSOR DGTL -40C-85C TO46-4

MT29F8G16ABACAWP:C

MT29F8G16ABACAWP:C

Micron Technology Inc.

IC FLASH 8G PARALLEL 48TSOP I

CS5173EDR8G

CS5173EDR8G

ON Semiconductor

IC REG MULT CONFG ADJ 1.5A 8SOIC

SMCJ5.0CA

SMCJ5.0CA

TVS DIODE 5V 9.2V DO214AB

LT8645SEV#PBF

LT8645SEV#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 8A 32LQFN

PIC16F1705-I/P

PIC16F1705-I/P

Microchip Technology

IC MCU 8BIT 14KB FLASH 14DIP

MAX6817EUT+T

MAX6817EUT+T

Maxim Integrated

IC DEBOUNCER SWITCH DUAL SOT23-6

CTX01-15473

CTX01-15473

Eaton - Electronics Division

FIXED INDUCTOR

NE3509M04-A

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI