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STGP19NC60H

STGP19NC60H

For Reference Only

Part Number STGP19NC60H
PNEDA Part # STGP19NC60H
Description IGBT 600V 40A 130W TO220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 21,312
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGP19NC60H Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGP19NC60H
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGP19NC60H, STGP19NC60H Datasheet (Total Pages: 15, Size: 657.75 KB)
PDFSTGP19NC60H Datasheet Cover
STGP19NC60H Datasheet Page 2 STGP19NC60H Datasheet Page 3 STGP19NC60H Datasheet Page 4 STGP19NC60H Datasheet Page 5 STGP19NC60H Datasheet Page 6 STGP19NC60H Datasheet Page 7 STGP19NC60H Datasheet Page 8 STGP19NC60H Datasheet Page 9 STGP19NC60H Datasheet Page 10 STGP19NC60H Datasheet Page 11

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STGP19NC60H Specifications

ManufacturerSTMicroelectronics
SeriesPowerMESH™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 12A
Power - Max130W
Switching Energy85µJ (on), 189µJ (off)
Input TypeStandard
Gate Charge53nC
Td (on/off) @ 25°C25ns/97ns
Test Condition390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 40A

Power - Max

380W

Switching Energy

4.5mJ (on), 3mJ (off)

Input Type

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Gate Charge

138nC

Td (on/off) @ 25°C

21ns/290ns

Test Condition

960V, 40A, 2Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

4500V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

170nC

Td (on/off) @ 25°C

36ns/110ns

Test Condition

960V, 40A, 2Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

Supplier Device Package

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GN2470K4-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

700V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

TO-252

IRGB6B60KDPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

13A

Current - Collector Pulsed (Icm)

26A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 5A

Power - Max

90W

Switching Energy

110µJ (on), 135µJ (off)

Input Type

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Gate Charge

18.2nC

Td (on/off) @ 25°C

25ns/215ns

Test Condition

400V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

70ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

SGP23N60UFDTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

23A

Current - Collector Pulsed (Icm)

92A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 12A

Power - Max

100W

Switching Energy

115µJ (on), 135µJ (off)

Input Type

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Gate Charge

49nC

Td (on/off) @ 25°C

17ns/60ns

Test Condition

300V, 12A, 23Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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