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STGP4M65DF2

STGP4M65DF2

For Reference Only

Part Number STGP4M65DF2
PNEDA Part # STGP4M65DF2
Description IGBT M SERIES 650V 4A LOW LOSS
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 16,482
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGP4M65DF2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGP4M65DF2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGP4M65DF2, STGP4M65DF2 Datasheet (Total Pages: 16, Size: 974.65 KB)
PDFSTGP4M65DF2 Datasheet Cover
STGP4M65DF2 Datasheet Page 2 STGP4M65DF2 Datasheet Page 3 STGP4M65DF2 Datasheet Page 4 STGP4M65DF2 Datasheet Page 5 STGP4M65DF2 Datasheet Page 6 STGP4M65DF2 Datasheet Page 7 STGP4M65DF2 Datasheet Page 8 STGP4M65DF2 Datasheet Page 9 STGP4M65DF2 Datasheet Page 10 STGP4M65DF2 Datasheet Page 11

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STGP4M65DF2 Specifications

ManufacturerSTMicroelectronics
SeriesM
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)8A
Current - Collector Pulsed (Icm)16A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A
Power - Max68W
Switching Energy40µJ (on), 136µJ (off)
Input TypeStandard
Gate Charge15.2nC
Td (on/off) @ 25°C12ns/86ns
Test Condition400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr)133ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Current - Collector Pulsed (Icm)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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