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STGW10M65DF2

STGW10M65DF2

For Reference Only

Part Number STGW10M65DF2
PNEDA Part # STGW10M65DF2
Description TRENCH GATE FIELD-STOP IGBT M SE
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,814
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGW10M65DF2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGW10M65DF2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGW10M65DF2, STGW10M65DF2 Datasheet (Total Pages: 16, Size: 936.2 KB)
PDFSTGW10M65DF2 Datasheet Cover
STGW10M65DF2 Datasheet Page 2 STGW10M65DF2 Datasheet Page 3 STGW10M65DF2 Datasheet Page 4 STGW10M65DF2 Datasheet Page 5 STGW10M65DF2 Datasheet Page 6 STGW10M65DF2 Datasheet Page 7 STGW10M65DF2 Datasheet Page 8 STGW10M65DF2 Datasheet Page 9 STGW10M65DF2 Datasheet Page 10 STGW10M65DF2 Datasheet Page 11

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STGW10M65DF2 Specifications

ManufacturerSTMicroelectronics
SeriesM
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 10A
Power - Max115W
Switching Energy120µJ (on), 270µJ (off)
Input TypeStandard
Gate Charge28nC
Td (on/off) @ 25°C19ns/91ns
Test Condition400V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr)96ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Current - Collector Pulsed (Icm)

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

281ns

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-55°C ~ 175°C (TJ)

Mounting Type

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ON Semiconductor

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Supplier Device Package

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