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STGW45HF60WDI

STGW45HF60WDI STGW45HF60WDI

For Reference Only

Part Number STGW45HF60WDI
PNEDA Part # STGW45HF60WDI
Description IGBT 600V 70A 250W TO247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,122
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 27 - May 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGW45HF60WDI Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGW45HF60WDI
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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STGW45HF60WDI Specifications

ManufacturerSTMicroelectronics
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)70A
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Power - Max250W
Switching Energy330µJ (off)
Input TypeStandard
Gate Charge160nC
Td (on/off) @ 25°C-/145ns
Test Condition400V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr)90ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

70A

Vce(on) (Max) @ Vge, Ic

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Power - Max

160W

Switching Energy

440µJ (on), 220µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 12A, 20Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Alpha & Omega Semiconductor

Manufacturer

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 40A

Power - Max

312.5W

Switching Energy

1.72mJ (on), 300µJ (off)

Input Type

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Gate Charge

63.5nC

Td (on/off) @ 25°C

28ns/77ns

Test Condition

400V, 40A, 7.5Ohm, 15V

Reverse Recovery Time (trr)

138ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Rohm Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

65A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

98nC

Td (on/off) @ 25°C

53ns/227ns

Test Condition

400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

58ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

6.8A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

25W

Switching Energy

140µJ (on), 120µJ (off)

Input Type

Standard

Gate Charge

15nC

Td (on/off) @ 25°C

40ns/87ns

Test Condition

480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

28ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220AB Full-Pak

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

290W

Switching Energy

1.13mJ (on), 310µJ (off)

Input Type

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Gate Charge

120nC

Td (on/off) @ 25°C

25ns/115ns

Test Condition

400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

TO-247-3

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