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STGW80H65DFB-4

STGW80H65DFB-4

For Reference Only

Part Number STGW80H65DFB-4
PNEDA Part # STGW80H65DFB-4
Description IGBT BIPO 650V 80A TO247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,438
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGW80H65DFB-4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGW80H65DFB-4
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGW80H65DFB-4, STGW80H65DFB-4 Datasheet (Total Pages: 16, Size: 931.42 KB)
PDFSTGW80H65DFB-4 Datasheet Cover
STGW80H65DFB-4 Datasheet Page 2 STGW80H65DFB-4 Datasheet Page 3 STGW80H65DFB-4 Datasheet Page 4 STGW80H65DFB-4 Datasheet Page 5 STGW80H65DFB-4 Datasheet Page 6 STGW80H65DFB-4 Datasheet Page 7 STGW80H65DFB-4 Datasheet Page 8 STGW80H65DFB-4 Datasheet Page 9 STGW80H65DFB-4 Datasheet Page 10 STGW80H65DFB-4 Datasheet Page 11

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STGW80H65DFB-4 Specifications

ManufacturerSTMicroelectronics
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)120A
Current - Collector Pulsed (Icm)240A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 80A
Power - Max469W
Switching Energy2.1mJ (on), 1.5mJ (off)
Input TypeStandard
Gate Charge414nC
Td (on/off) @ 25°C84ns/280ns
Test Condition400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr)85ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-4
Supplier Device PackageTO-247-4L

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