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STH150N10F7-2

STH150N10F7-2

For Reference Only

Part Number STH150N10F7-2
PNEDA Part # STH150N10F7-2
Description MOSFET N-CH 100V 90A H2PAK-2
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,078
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH150N10F7-2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH150N10F7-2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH150N10F7-2, STH150N10F7-2 Datasheet (Total Pages: 16, Size: 952.36 KB)
PDFSTH150N10F7-2 Datasheet Cover
STH150N10F7-2 Datasheet Page 2 STH150N10F7-2 Datasheet Page 3 STH150N10F7-2 Datasheet Page 4 STH150N10F7-2 Datasheet Page 5 STH150N10F7-2 Datasheet Page 6 STH150N10F7-2 Datasheet Page 7 STH150N10F7-2 Datasheet Page 8 STH150N10F7-2 Datasheet Page 9 STH150N10F7-2 Datasheet Page 10 STH150N10F7-2 Datasheet Page 11

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STH150N10F7-2 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.9mOhm @ 55A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs117nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8115pF @ 50V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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