Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STH170N8F7-2

STH170N8F7-2

For Reference Only

Part Number STH170N8F7-2
PNEDA Part # STH170N8F7-2
Description MOSFET N-CH 80V 120A
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,154
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH170N8F7-2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH170N8F7-2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH170N8F7-2, STH170N8F7-2 Datasheet (Total Pages: 15, Size: 817.77 KB)
PDFSTH170N8F7-2 Datasheet Cover
STH170N8F7-2 Datasheet Page 2 STH170N8F7-2 Datasheet Page 3 STH170N8F7-2 Datasheet Page 4 STH170N8F7-2 Datasheet Page 5 STH170N8F7-2 Datasheet Page 6 STH170N8F7-2 Datasheet Page 7 STH170N8F7-2 Datasheet Page 8 STH170N8F7-2 Datasheet Page 9 STH170N8F7-2 Datasheet Page 10 STH170N8F7-2 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STH170N8F7-2 Datasheet
  • where to find STH170N8F7-2
  • STMicroelectronics

  • STMicroelectronics STH170N8F7-2
  • STH170N8F7-2 PDF Datasheet
  • STH170N8F7-2 Stock

  • STH170N8F7-2 Pinout
  • Datasheet STH170N8F7-2
  • STH170N8F7-2 Supplier

  • STMicroelectronics Distributor
  • STH170N8F7-2 Price
  • STH170N8F7-2 Distributor

STH170N8F7-2 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ F7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8710pF @ 40V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SI6469DQ-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

28mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

40nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSSOP

Package / Case

8-TSSOP (0.173", 4.40mm Width)

IXFN48N60P

IXYS

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

140mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

5.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8860pF @ 25V

FET Feature

-

Power Dissipation (Max)

625W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

SI1039X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

870mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

165mOhm @ 870mA, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

170mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666

TK39J60W,S1VQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

38.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 19.4A, 10V

Vgs(th) (Max) @ Id

3.7V @ 1.9mA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 300V

FET Feature

Super Junction

Power Dissipation (Max)

270W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P(N)

Package / Case

TO-3P-3, SC-65-3

BUK963R2-40B,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

2.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

93.4nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

10502pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

NDS331N

NDS331N

ON Semiconductor

MOSFET N-CH 20V 1.3A SSOT3

NC7SP125P5X

NC7SP125P5X

ON Semiconductor

IC BUF NON-INVERT 3.6V SC70-5

NFA31GD1014704D

NFA31GD1014704D

Murata

FILTER RC 47 OHM/100PF SMD

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC

AD7763BSVZ

AD7763BSVZ

Analog Devices

IC ADC 24BIT SIGMA-DELTA 64TQFP

M29W160ET70N6E

M29W160ET70N6E

Micron Technology Inc.

IC FLASH 16M PARALLEL 48TSOP

NCP81071BDR2G

NCP81071BDR2G

ON Semiconductor

IC MOSFET DVR HS 5A DUAL 8SOIC

CY2305SXI-1HT

CY2305SXI-1HT

Cypress Semiconductor

IC CLK ZDB 5OUT 133MHZ 8SOIC

ABM8-24.000MHZ-D2-T

ABM8-24.000MHZ-D2-T

Abracon

CRYSTAL 24.0000MHZ 18PF SMD

ESD9X5.0ST5G

ESD9X5.0ST5G

ON Semiconductor

TVS DIODE 5V 12.3V SOD923

CSTCE12M0G55-R0

CSTCE12M0G55-R0

Murata

CER RES 12.0000MHZ 33PF SMD

ADP5054ACPZ-R7

ADP5054ACPZ-R7

Analog Devices

IC REG CTRLR BUCK 48LFCSP