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STH210N75F6-2

STH210N75F6-2

For Reference Only

Part Number STH210N75F6-2
PNEDA Part # STH210N75F6-2
Description MOSFET N-CH 75V 180A H2PAK-2
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,268
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH210N75F6-2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH210N75F6-2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH210N75F6-2, STH210N75F6-2 Datasheet (Total Pages: 16, Size: 899.45 KB)
PDFSTH210N75F6-2 Datasheet Cover
STH210N75F6-2 Datasheet Page 2 STH210N75F6-2 Datasheet Page 3 STH210N75F6-2 Datasheet Page 4 STH210N75F6-2 Datasheet Page 5 STH210N75F6-2 Datasheet Page 6 STH210N75F6-2 Datasheet Page 7 STH210N75F6-2 Datasheet Page 8 STH210N75F6-2 Datasheet Page 9 STH210N75F6-2 Datasheet Page 10 STH210N75F6-2 Datasheet Page 11

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STH210N75F6-2 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs171nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11800pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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