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STH320N4F6-6

STH320N4F6-6

For Reference Only

Part Number STH320N4F6-6
PNEDA Part # STH320N4F6-6
Description MOSFET N-CH 40V 200A H2PAK-6
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,514
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Sep 27 - Oct 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH320N4F6-6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH320N4F6-6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH320N4F6-6, STH320N4F6-6 Datasheet (Total Pages: 18, Size: 882.91 KB)
PDFSTH320N4F6-6 Datasheet Cover
STH320N4F6-6 Datasheet Page 2 STH320N4F6-6 Datasheet Page 3 STH320N4F6-6 Datasheet Page 4 STH320N4F6-6 Datasheet Page 5 STH320N4F6-6 Datasheet Page 6 STH320N4F6-6 Datasheet Page 7 STH320N4F6-6 Datasheet Page 8 STH320N4F6-6 Datasheet Page 9 STH320N4F6-6 Datasheet Page 10 STH320N4F6-6 Datasheet Page 11

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STH320N4F6-6 Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13800pF @ 15V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-6
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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