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STI10N62K3

STI10N62K3

For Reference Only

Part Number STI10N62K3
PNEDA Part # STI10N62K3
Description MOSFET N-CH 620V 8.4A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 21,684
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STI10N62K3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTI10N62K3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STI10N62K3, STI10N62K3 Datasheet (Total Pages: 17, Size: 948.52 KB)
PDFSTF10N62K3 Datasheet Cover
STF10N62K3 Datasheet Page 2 STF10N62K3 Datasheet Page 3 STF10N62K3 Datasheet Page 4 STF10N62K3 Datasheet Page 5 STF10N62K3 Datasheet Page 6 STF10N62K3 Datasheet Page 7 STF10N62K3 Datasheet Page 8 STF10N62K3 Datasheet Page 9 STF10N62K3 Datasheet Page 10 STF10N62K3 Datasheet Page 11

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STI10N62K3 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)620V
Current - Continuous Drain (Id) @ 25°C8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1250pF @ 50V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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