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STI11NM60ND

STI11NM60ND

For Reference Only

Part Number STI11NM60ND
PNEDA Part # STI11NM60ND
Description MOSFET N-CH 600V 10A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,950
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 24 - May 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STI11NM60ND Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTI11NM60ND
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STI11NM60ND, STI11NM60ND Datasheet (Total Pages: 19, Size: 764.57 KB)
PDFSTI11NM60ND Datasheet Cover
STI11NM60ND Datasheet Page 2 STI11NM60ND Datasheet Page 3 STI11NM60ND Datasheet Page 4 STI11NM60ND Datasheet Page 5 STI11NM60ND Datasheet Page 6 STI11NM60ND Datasheet Page 7 STI11NM60ND Datasheet Page 8 STI11NM60ND Datasheet Page 9 STI11NM60ND Datasheet Page 10 STI11NM60ND Datasheet Page 11

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STI11NM60ND Specifications

ManufacturerSTMicroelectronics
SeriesFDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 50V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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