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STI16N65M5

STI16N65M5

For Reference Only

Part Number STI16N65M5
PNEDA Part # STI16N65M5
Description MOSFET N-CH 650V 12A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 18,540
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STI16N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTI16N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STI16N65M5, STI16N65M5 Datasheet (Total Pages: 20, Size: 1,099.89 KB)
PDFSTW16N65M5 Datasheet Cover
STW16N65M5 Datasheet Page 2 STW16N65M5 Datasheet Page 3 STW16N65M5 Datasheet Page 4 STW16N65M5 Datasheet Page 5 STW16N65M5 Datasheet Page 6 STW16N65M5 Datasheet Page 7 STW16N65M5 Datasheet Page 8 STW16N65M5 Datasheet Page 9 STW16N65M5 Datasheet Page 10 STW16N65M5 Datasheet Page 11

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STI16N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs279mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1250pF @ 100V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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