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STI30N65M5

STI30N65M5

For Reference Only

Part Number STI30N65M5
PNEDA Part # STI30N65M5
Description MOSFET N-CH 650V 22A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 23,352
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STI30N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTI30N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STI30N65M5, STI30N65M5 Datasheet (Total Pages: 22, Size: 1,276.15 KB)
PDFSTF30N65M5 Datasheet Cover
STF30N65M5 Datasheet Page 2 STF30N65M5 Datasheet Page 3 STF30N65M5 Datasheet Page 4 STF30N65M5 Datasheet Page 5 STF30N65M5 Datasheet Page 6 STF30N65M5 Datasheet Page 7 STF30N65M5 Datasheet Page 8 STF30N65M5 Datasheet Page 9 STF30N65M5 Datasheet Page 10 STF30N65M5 Datasheet Page 11

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STI30N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs139mOhm @ 11A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2880pF @ 100V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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