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STI34N65M5

STI34N65M5

For Reference Only

Part Number STI34N65M5
PNEDA Part # STI34N65M5
Description MOSFET N-CH 650V 28A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 21,372
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STI34N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTI34N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STI34N65M5, STI34N65M5 Datasheet (Total Pages: 22, Size: 1,424.98 KB)
PDFSTB34N65M5 Datasheet Cover
STB34N65M5 Datasheet Page 2 STB34N65M5 Datasheet Page 3 STB34N65M5 Datasheet Page 4 STB34N65M5 Datasheet Page 5 STB34N65M5 Datasheet Page 6 STB34N65M5 Datasheet Page 7 STB34N65M5 Datasheet Page 8 STB34N65M5 Datasheet Page 9 STB34N65M5 Datasheet Page 10 STB34N65M5 Datasheet Page 11

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STI34N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 100V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak

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