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STI35N65M5

STI35N65M5

For Reference Only

Part Number STI35N65M5
PNEDA Part # STI35N65M5
Description MOSFET N-CH 650V 27A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,004
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STI35N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTI35N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STI35N65M5, STI35N65M5 Datasheet (Total Pages: 22, Size: 1,273.21 KB)
PDFSTI35N65M5 Datasheet Cover
STI35N65M5 Datasheet Page 2 STI35N65M5 Datasheet Page 3 STI35N65M5 Datasheet Page 4 STI35N65M5 Datasheet Page 5 STI35N65M5 Datasheet Page 6 STI35N65M5 Datasheet Page 7 STI35N65M5 Datasheet Page 8 STI35N65M5 Datasheet Page 9 STI35N65M5 Datasheet Page 10 STI35N65M5 Datasheet Page 11

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STI35N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs98mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs83nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3750pF @ 100V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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