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STI4N62K3

STI4N62K3

For Reference Only

Part Number STI4N62K3
PNEDA Part # STI4N62K3
Description MOSFET N-CH 620V 3.8A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,786
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STI4N62K3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTI4N62K3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STI4N62K3, STI4N62K3 Datasheet (Total Pages: 19, Size: 1,055.96 KB)
PDFSTP4N62K3 Datasheet Cover
STP4N62K3 Datasheet Page 2 STP4N62K3 Datasheet Page 3 STP4N62K3 Datasheet Page 4 STP4N62K3 Datasheet Page 5 STP4N62K3 Datasheet Page 6 STP4N62K3 Datasheet Page 7 STP4N62K3 Datasheet Page 8 STP4N62K3 Datasheet Page 9 STP4N62K3 Datasheet Page 10 STP4N62K3 Datasheet Page 11

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STI4N62K3 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)620V
Current - Continuous Drain (Id) @ 25°C3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 50V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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