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STL25N60M2-EP

STL25N60M2-EP

For Reference Only

Part Number STL25N60M2-EP
PNEDA Part # STL25N60M2-EP
Description MOSFET N-CH 600V 16A MLPD8X8 4L
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 23,832
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STL25N60M2-EP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTL25N60M2-EP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STL25N60M2-EP, STL25N60M2-EP Datasheet (Total Pages: 16, Size: 404.22 KB)
PDFSTL25N60M2-EP Datasheet Cover
STL25N60M2-EP Datasheet Page 2 STL25N60M2-EP Datasheet Page 3 STL25N60M2-EP Datasheet Page 4 STL25N60M2-EP Datasheet Page 5 STL25N60M2-EP Datasheet Page 6 STL25N60M2-EP Datasheet Page 7 STL25N60M2-EP Datasheet Page 8 STL25N60M2-EP Datasheet Page 9 STL25N60M2-EP Datasheet Page 10 STL25N60M2-EP Datasheet Page 11

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STL25N60M2-EP Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2-EP
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs205mOhm @ 8A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1090pF @ 100V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (8x8) HV
Package / Case8-PowerVDFN

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