Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STL36N55M5

STL36N55M5

For Reference Only

Part Number STL36N55M5
PNEDA Part # STL36N55M5
Description MOSFET N-CH 550V 22.5A 4PWRFLAT
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,040
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STL36N55M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTL36N55M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STL36N55M5, STL36N55M5 Datasheet (Total Pages: 16, Size: 1,183.53 KB)
PDFSTL36N55M5 Datasheet Cover
STL36N55M5 Datasheet Page 2 STL36N55M5 Datasheet Page 3 STL36N55M5 Datasheet Page 4 STL36N55M5 Datasheet Page 5 STL36N55M5 Datasheet Page 6 STL36N55M5 Datasheet Page 7 STL36N55M5 Datasheet Page 8 STL36N55M5 Datasheet Page 9 STL36N55M5 Datasheet Page 10 STL36N55M5 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STL36N55M5 Datasheet
  • where to find STL36N55M5
  • STMicroelectronics

  • STMicroelectronics STL36N55M5
  • STL36N55M5 PDF Datasheet
  • STL36N55M5 Stock

  • STL36N55M5 Pinout
  • Datasheet STL36N55M5
  • STL36N55M5 Supplier

  • STMicroelectronics Distributor
  • STL36N55M5 Price
  • STL36N55M5 Distributor

STL36N55M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25°C22.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs90mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2670pF @ 100V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 150W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (8x8) HV
Package / Case8-PowerVDFN

The Products You May Be Interested In

DMTH6010SK3-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

16.3A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1940pF @ 30V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF6215S

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTD3055-094

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

94mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 48W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRLR8726TRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

86A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2150pF @ 15V

FET Feature

-

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTHD3101FT3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.2A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

80mOhm @ 3.2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.4nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ChipFET™

Package / Case

8-SMD, Flat Lead

Recently Sold

LPC2388FBD144,551

LPC2388FBD144,551

NXP

IC MCU 32BIT 512KB FLASH 144LQFP

SI4836DY-T1-E3

SI4836DY-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 17A 8-SOIC

TSL2550T

TSL2550T

ams

SENSOR OPT 640NM AMBIENT 4SMD

SQJ423EP-T1_GE3

SQJ423EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 40V 55A POWERPAKSO-8

AD780ARZ-REEL7

AD780ARZ-REEL7

Analog Devices

IC VREF SERIES/SHUNT PROG 8SOIC

AD8031ARZ

AD8031ARZ

Analog Devices

IC OPAMP VFB 1 CIRCUIT 8SOIC

MMBD4148

MMBD4148

ON Semiconductor

DIODE GEN PURP 100V 200MA SOT23

H1102NLT

H1102NLT

Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100

MP4560DN-LF-Z

MP4560DN-LF-Z

Monolithic Power Systems Inc.

IC REG BUCK ADJUSTABLE 2A 8SOIC

SSM3J328R,LF

SSM3J328R,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

NCP1055ST100T3G

NCP1055ST100T3G

ON Semiconductor

IC CONV PWM UVLO HV SOT223-4

MURS120-E3/52T

MURS120-E3/52T

Vishay Semiconductor Diodes Division

DIODE GP 200V 1A DO214AA